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NV-based quantum memories coupled to photonic integrated circuits

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Author(s)
Mouradian, Sara L
•
Schroder, Tim
•
Zheng, Jiabao
•
Lu, Tsung-Ju Jeff
•
Choi, Hyeongrak
•
Wan, Noel Heng Loon
•
Walsh, Michael E
•
Bersin, Eric Alexander
•
Englund, Dirk R.
Date Issued
September 2016
Journal
SPIE Proceedings Volume 9920, Active Photonic Materials VIII
Publisher
SPIE
Citation
Mouradian, Sara, et al. "NV-Based Quantum Memories Coupled to Photonic Integrated Circuits." 28 August - September 1, 2016, San Diego, California, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou, SPIE, 2016, p. 992014. © 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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Final published version
Abstract
The negatively charged nitrogen vacancy (NV) center in diamond is a promising solid-state quantum memory. However, developing networks comprising such quantum memories is limited by the fabrication yield of the quantum nodes and the collection efficiency of indistinguishable photons. In this letter, we report on advances on a hybrid quantum system that allows for scalable production of networks, even with low-yield node fabrication. Moreover, an NV center in a simple single mode diamond waveguide is shown in simulation and experiment to couple well to a single mode SiN waveguide with a simple adiabatic taper for optimal mode transfer. In addition, cavity enhancement of the zero phonon line of the NV center with a resonance coupled to the waveguide mode allows a simulated < 1800 fold increase in the collection of photon states coherent with the state of the NV center into a single frequency and spatial mode.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/114455
DOI of Published Version
https://doi.org/10.1117/12.2236329
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