Experimental study of electron velocity overshoot in silicon inversion layers

Hu, Hang

Experimental study of electron velocity overshoot in silicon inversion layers

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Author(s)

Hu, Hang

Advisor(s)

Henry I. Smith.

Date Issued

1994

Publisher

Massachusetts Institute of Technology

Description

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.

Includes bibliographical references (leaves 127-133).

Subjects

Physics

MIT Department

Massachusetts Institute of Technology. Department of Physics

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