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  5. Experimental study of electron velocity overshoot in silicon inversion layers

Experimental study of electron velocity overshoot in silicon inversion layers

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Author(s)
Hu, Hang
Advisor(s)
Henry I. Smith.
Date Issued
1994
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.
Includes bibliographical references (leaves 127-133).
Subjects
Physics
MIT Department
Massachusetts Institute of Technology. Department of Physics
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M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Persistent DSpace Link
http://hdl.handle.net/1721.1/28120
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