Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy
Name
Pan-2012-Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy.pdf
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Author(s)
Pan, Z. -H.
Fedorov, A. V.
Gardner, Dillon Richard
Lee, Young S.
Chu, S.
Valla, T.
Date Issued
May 2012
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Pan, Z.-H. et al. “Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy.” Physical Review Letters 108.18 (2012). © 2012 American Physical Society
Version
Final published version
Abstract
Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi[subscript 2]Se[aubscript 3], by high-resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state’s dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room-temperature electronic devices.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.108.187001
