Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide
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Li-2015-Optoelectronic crystal.pdf
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Author(s)
Li, Hong
Contryman, Alex W.
Qian, Xiaofeng
Gong, Yongji
Wang, Xingli
Weisse, Jeffery M.
Lee, Chi Hwan
Zhao, Jiheng
Ajayan, Pulickel M.
Li, Ju
Date Issued
June 2015
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Li, Hong, Alex W. Contryman, Xiaofeng Qian, Sina Moeini Ardakani, Yongji Gong, Xingli Wang, Jeffery M. Weisse, et al. “Optoelectronic Crystal of Artificial Atoms in Strain-Textured Molybdenum Disulphide.” Nat Comms 6 (June 19, 2015): 7381. © 2015 Macmillan Publishers Limited
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Final published version
Abstract
The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this ‘artificial atom’ concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.
MIT Department
Massachusetts Institute of Technology. Department of Civil and Environmental Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1038/ncomms8381
