Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications
Author(s)
Chou, Po-Chien
Hsieh, Ting-En
Cheng, Stone
del Alamo, Jesus A
Chang, Edward Yi
Date Issued
April 2018
Journal
Semiconductor Science and Technology
Publisher
IOP Publishing
Citation
Po-Chien Chou et al. "Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications." Semiconductor Science and Technology 33, 5 (April 2018): 055012 © 2018 IOP Publishing Ltd
Version
Author's final manuscript
Abstract
This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1088/1361-6641/aabb6a
