Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation
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021429_1_5.0181361.pdf
Description
Published version
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4.43 MB
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Checksum (MD5)
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Author(s)
Mandal, Manasi
Chotrattanapituk, Abhijatmedhi
Woller, Kevin
Wu, Lijun
Xu, Haowei
Hung, Nguyen Tuan
Mao, Nannan
Okabe, Ryotaro
Boonkird, Artittaya
Nguyen, Thanh
Date Issued
June 25, 2024
Journal
Applied Physics Reviews
Publisher
AIP Publishing
Citation
Manasi Mandal, Abhijatmedhi Chotrattanapituk, Kevin Woller, Lijun Wu, Haowei Xu, Nguyen Tuan Hung, Nannan Mao, Ryotaro Okabe, Artittaya Boonkird, Thanh Nguyen, Nathan C. Drucker, Xiaoqian M. Chen, Takashi Momiki, Ju Li, Jing Kong, Yimei Zhu, Mingda Li; Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation. Appl. Phys. Rev. 1 June 2024; 11 (2): 021429.
Version
Final published version
Abstract
The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/5.0181361
