Gate-Activated Photoresponse in a Graphene p–n Junction
Name
levitov3.pdf
Size
1.52 MB
Format
Adobe PDF
Checksum (MD5)
7c782d1867b6e3d45ef035f30a6a44f1
Author(s)
Lemme, Max C.
Koppens, Frank H. L.
Falk, Abram L.
Rudner, Mark S.
Park, Hongkun
Marcus, Charles M.
Levitov, Leonid
Date Issued
August 2011
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Lemme, Max C., Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid S. Levitov, and Charles M. Marcus. “Gate-Activated Photoresponse in a Graphene P–n Junction.” Nano Lett. 11, no. 10 (October 12, 2011): 4134–4137.
Version
Author's final manuscript
Abstract
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p–n junction is formed, allowing on–off control of photodetection. Photocurrents generated near p–n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/nl2019068
