Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices
Name
RJ-198 paper.pdf
Description
Published version
Size
2.13 MB
Format
Adobe PDF
Checksum (MD5)
a623e02f3aa161a877c978ce4ffd56b9
Author(s)
El Kazzi, S
Alian, A
Hsu, B
Favia, P
Merckling, C
Lu, W
del Alamo, JA
Collaert, N
Date Issued
2018
Journal
Journal of Applied Physics
Publisher
AIP Publishing
Version
Final published version
Abstract
© 2018 Author(s). We study in this work the growth and fabrication of top-down highly doped n + InAs(Si)/p + GaSb(Si) Esaki tunneling diodes on (001) GaAs substrates. A careful investigation on the highly mismatched GaSb/GaAs growth is first conducted by means of Reflection High-Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and X-Ray Diffraction (XRD) analyses. These results are expected to pave the way to methods for III-Sb buffer layer's integration with low threading dislocation (TD) densities. A comparison between AFM, XRD, defect revealing by chemical etching and transmission electron microscopy (TEM) is then presented to calculate the precise TD density and its influence on the device structure. In the last part, we report on first operating sub-30 nm III-V vertical NW tunneling devices on (001) commercial GaAs substrates.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.5049900
