Grain Boundary Engineering for Improved Thin Silicon Photovoltaics
Name
Grossman_Grain boundary.pdf
Size
2.14 MB
Format
Adobe PDF
Checksum (MD5)
4d28edf86efc912ce6799564199f9d79
Author(s)
Raghunathan, Rajamani
Johlin, Eric Carl
Grossman, Jeffrey C.
Date Issued
June 2014
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Raghunathan, Rajamani, Eric Johlin, and Jeffrey C. Grossman. “Grain Boundary Engineering for Improved Thin Silicon Photovoltaics.” Nano Lett. 14, no. 9 (September 10, 2014): 4943–4950.
Version
Author's final manuscript
Abstract
In photovoltaic devices, the bulk disorder introduced by grain boundaries (GBs) in polycrystalline silicon is generally considered to be detrimental to the physical stability and electronic transport of the bulk material. However, at the extremum of disorder, amorphous silicon is known to have a beneficially increased band gap and enhanced optical absorption. This study is focused on understanding and utilizing the nature of the most commonly encountered Σ[subscript 3] GBs, in an attempt to balance incorporation of the advantageous properties of amorphous silicon while avoiding the degraded electronic transport of a fully amorphous system. A combination of theoretical methods is employed to understand the impact of ordered Σ[subscript 3] GBs on the material properties and full-device photovoltaic performance.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/nl501020q
