Comparison of nonlinear microscopy and frozen section histology for imaging of Mohs surgical margins
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boe-10-8-4249.pdf
Description
Published version
Size
4.18 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Giacomelli, Michael
Faulkner-Jones, Beverly E.
Cahill, Lucas Christopher
Yoshitake, Tadayuki
Do, Daihung
Fujimoto, James G
Date Issued
July 2019
Journal
Biomedical Optics Express
Publisher
Optical Society of America (OSA)
Citation
Giacomelli, Michael G. et al. "Comparison of nonlinear microscopy and frozen section histology for imaging of Mohs surgical margins." Biomedical Optics Express 10, 8 (July 2019): 4249-4260 © 2019 Optical Society of America
Version
Final published version
Abstract
Mohs surgery uses en face frozen section analysis (FSA) with complete margin examination for the excision of select basal cell carcinomas (BCC), obtaining excellent cosmetic outcomes and extremely low recurrence rates. However, Mohs with FSA is time-consuming because of the need to iteratively perform cryosectioning on sequential excisions. Fluorescent microscopies can image tissue specimens without requiring physical sectioning, potentially reducing the time to perform Mohs surgery. We demonstrate a protocol for nonlinear microscopy (NLM) imaging of surgical specimens that combines dual agent staining, virtual H&E rendering, and video rate imaging. We also introduce a novel protocol that enables micron-level co-registration of NLM images with FSA histology, and demonstrate that NLM can reproduce similar features similar to FSA in BCC specimens with both negative and positive surgical margins. We show that the fluorescent labels can be extracted with conventional vacuum infiltration processing, enabling subsequent immunohistochemistry on fluorescently labeled tissue. This protocol can also be applied to evaluate the performance of NLM compared with FSA in a wide range of pathologies for intraoperative consultation.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1364/boe.10.004249
