In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
Name
1.5058717.pdf
Description
Published version
Size
1.97 MB
Format
Adobe PDF
Checksum (MD5)
4bf4aae21abec681ce5a12fe787e8df3
Author(s)
Fitzgerald, Eugene A
Date Issued
November 2018
Journal
AIP Advances
Publisher
AIP Publishing
Citation
Wang, Yue et al. “In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations.” AIP Advances, 8, 11 (Novemver 2018): 115132 © 2018 The Author(s)
Version
Final published version
Abstract
We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ∼100 through optimizing the base doping concentration (C-doped, ∼ 1.9×1019/cm3), base layer thickness (∼55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BVceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International license
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DOI of Published Version
https://doi.org/10.1063/1.5058717
