Van der Waals magnetic materials for current-induced control toward spintronic applications
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43579_2024_Article_673.pdf
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0538bedbe63400e18b2758f723f43373
Author(s) • •
Ryu, Jeongchun
Kajale, Shivam N.
Sarkar, Deblina
Date Issued
November 11, 2024
Journal
MRS Communications
Publisher
Springer International Publishing
Citation
Ryu, J., Kajale, S.N. & Sarkar, D. Van der Waals magnetic materials for current-induced control toward spintronic applications. MRS Communications (2024).
Version
Final published version
Abstract
Spintronics, leveraging electron spin for information processing, promises substantial advancements in energy-efficient computing. Van der Waals (vdW) magnetic materials, with their unique-layered structures and exceptional magnetic properties, have emerged as pivotal components in this field. This report explores the current-based control of vdW magnets, focusing on the spin–orbit torque (SOT) mechanism, which is crucial for spintronic applications. Key studies on Fe3GaTe2/Pt and Fe3GaTe2/WTe2 heterostructures are highlighted, demonstrating efficient SOT switching at room temperature. The advantages of vdW magnets for SOT switching, including high spin-torque efficiencies and superior interface quality, are discussed. The report also examines future directions, such as wafer-scale growth techniques, materials design for enhanced Curie temperatures (Tc), and the development of magneto tunnel junctions using all-vdW materials. These advancements underscore the potential of vdW magnetic materials in developing scalable, high-performance spintronic devices, paving the way for significant breakthroughs in energy-efficient computing. Graphical abstract
MIT Department
Massachusetts Institute of Technology. Media Laboratory
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Creative Commons Attribution
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DOI of Published Version
https://doi.org/10.1557/s43579-024-00673-x