An analysis of MRAM based memory technologies
Name
124514524-MIT.pdf
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Full printable version
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5.32 MB
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Author(s)
Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology
Advisor(s)
Caroline A. Ross.
Date Issued
2006
Publisher
Massachusetts Institute of Technology
Abstract
MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called "the ideal memory", it can potentially combine the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk, and all this while consuming a very low amount of power. However, it is the need for a fast and non-volatile computer memory that has been the key driver for evolution of this technology. At the moment, MRAM is in its final stages of development and much of the current research concentrates on issues like reducing the write current, increasing the density and making the process more reproducible. A lot of companies are pursuing research on this technology and are likely to introduce it into the market in the near future. However, it will be a while before MRAM can replace conventional memories. Nevertheless, since MRAM can resist high radiation, and can operate in extreme temperature conditions, it is likely that we will see the first MRAM in applications that need such properties.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.
Includes bibliographical references (leaves 66-68).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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