Effect of nucleation sites on the growth and quality of single-crystal boron arsenide
Name
1910.02149.pdf
Description
Submitted version
Size
2.37 MB
Format
Unknown
Checksum (MD5)
e78f2feafae0e23dcd2321e721795ef4
Author(s)
Gamage, GA
Chen, Ke
Chen, Gang
Tian, F
Ren, Z
Date Issued
December 2019
Journal
Materials Today Physics
Publisher
Elsevier BV
Version
Original manuscript
Abstract
© 2019 Elsevier Ltd Boron arsenide (BAs) has recently attracted significant attention since the confirmation of its unusually high thermal conductivity (κ) above 1000 W m−1 K−1. However, determining how to grow BAs single crystals (SCs) on the centimeter scale remains unsolved, which strongly limits further research into, and potential applications of, this interesting material. Here, we report our technique to grow a 7-mm-long BAs SC via the chemical vapor transport method by applying heteronucleation sites. The different κ values obtained from BAs SCs grown on different heteronucleation sites show the importance of choosing the proper nucleation material. We believe these findings will inspire further research into the growth of this unique semiconductor.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-NonCommercial-NoDerivs License
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1016/j.mtphys.2019.100160
