High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
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1507.00426.pdf
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Author(s)
Gao, Yuanda
Robertson, Alexander D.
Assefa, Solomon
Koppens, Frank H. L.
Hone, James
Shiue, Ren-Jye
Wang, Yifei
Peng, Cheng
Efetov, Dmitri
Englund, Dirk R.
Date Issued
November 2015
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Shiue, Ren-Jye et al. “High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.” Nano Letters 15, 11 (October 2015): 7288–7293 © 2015 American Chemical Society
Version
Author's final manuscript
Abstract
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers. Keywords: autocorrelators; boron nitride; graphene; optoelectronics; photodetectors; silicon photonics
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1021/ACS.NANOLETT.5B02368
