Measurement and modeling of transient effects in partially-depleted SOI MOSFETs
Name
35967767-MIT.pdf
Description
Full printable version
Size
5.02 MB
Format
Adobe PDF
Checksum (MD5)
88ec55b607e673ccb87591befde20b4c
Author(s)
Wei, Andy, 1972-
Advisor(s)
Dimitri A. Antoniadis.
Date Issued
1996
Publisher
Massachusetts Institute of Technology
Description
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
Includes bibliographical references (leaves 75-76).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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