Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors
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del Alamo_Nanoscale mapping.pdf
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Author(s)
Lin, Chung-Han
Merz, T. A.
Doutt, D. R.
Hetzer, M. J.
Joh, Jungwoo
del Alamo, Jesus A.
Mishra, U. K.
Brillson, L. J.
Date Issued
July 2009
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Lin, Chung-Han et al. “Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors.” Applied Physics Letters 95.3 (2009): 033510-3. © 2009 American Institute of Physics
Version
Final published version
Abstract
We used depth-resolved microcathodoluminescence spectroscopy (DRCLS) and Kelvin probe force microscopy (KPFM) to measure and map the temperature distribution and defect generation inside state-of-the-art AlGaN/GaN-based high electron mobility transistors (HEMTs) on a scale of tens of nanometers during device operation. DRCLS measurements of near band edge energies across the HEMT’s source-gate-drain regions reveal monotonic temperature increases across the submicron gate-drain channel, peaking under the drain side of the gate. DRCLS defect emissions mapped laterally and localized depthwise near the two-dimensional electron gas interface increase with device operation under the drain-side gate and correlate with higher KPFM surface potential maps.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3189102
