A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
Name
862079474-MIT.pdf
Description
Full printable version
Size
3.92 MB
Format
Adobe PDF
Checksum (MD5)
9eb1a790226d5e358074c8ca20d57f20
Author(s)
Radhakrishna, Ujwal
Advisor(s)
Dimitri A. Antoniadis.
Alternative Title
Compact transport and charge model for Gallium Nitride-based HEMTs for radio-frequency applications
Date Issued
2013
Publisher
Massachusetts Institute of Technology
Abstract
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 81-84).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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