High-speed polysilicon CMOS photodetector for telecom and datacom
Name
Ram_High-speed polysilicon CMOS photodetector for telecom and datacom.pdf
Size
2.72 MB
Format
Adobe PDF
Checksum (MD5)
f8cf48645996db075b3459f5faae1396
Author(s)
Atabaki, Amir H
Meng, Huaiyu
Alloatti, Luca
Mehta, Karan Kartik
Ram, Rajeev J
Date Issued
September 21, 2017
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Atabaki, Amir H. et al. “High-Speed Polysilicon CMOS Photodetector for Telecom and Datacom.” Applied Physics Letters 109, 11 (September 2016): 111106 © 2016 AIP Publishing
Version
Final published version
Abstract
Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow (“zero-change” CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.4962641
