Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application
Name
Palacios_Transport properties.pdf
Size
3.03 MB
Format
Adobe PDF
Checksum (MD5)
cb38f84a7626fa70f34e840c293c05ec
Author(s)
Nourbakhsh, Amirhasan
Zubair, Ahmad
Dresselhaus, Mildred
Palacios, Tomas
Date Issued
February 2016
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Nourbakhsh, Amirhasan et al. “Transport Properties of a MoS2/WSe2Heterojunction Transistor and Its Potential for Application.” Nano Letters 16, 2 (February 2016): 1359–1366. doi:10.1021/acs.nanolett.5b04791.
Version
Author's final manuscript
Abstract
This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS₂/WSe₂ heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe₂ stacked on multilayer MoS₂. The presence of NDR is attributed to the lateral band-to-band tunneling at the edge of the MoS₂/WSe₂ heterojunction. The backward tunneling diode shows an average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V–1. Associated with the tunnel-diode characteristics, a positive-to-negative transconductance in the MoS₂/WSe₂ heterojunction transistors is observed. The transition is induced by strong interlayer coupling between the films, which results in charge density and energy-band modulation. The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic using one pair of p-type transistors.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/acs.nanolett.5b04791
