A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme
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Author(s)
Razavipour, S. G.
Dupont, E.
Chan, Chun Wang Ivan
Xu, C.
Wasilewski, Z. R.
Laframboise, Sylvain R.
Hu, Qing
Ban, D.
Date Issued
January 2014
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Razavipour, S. G., E. Dupont, C. W. I. Chan, C. Xu, Z. R. Wasilewski, S. R. Laframboise, Q. Hu, and D. Ban. “A High Carrier Injection Terahertz Quantum Cascade Laser Based on Indirectly Pumped Scheme.” Appl. Phys. Lett. 104, no. 4 (January 27, 2014): 041111.
Version
Final published version
Abstract
A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al[subscript 0.25]Ga[subscript 0.75]As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1063/1.4862177
