Outphasing Control of Gallium Nitride based Very High Frequency Resonant Converters
Name
Madsen Outphasing.pdf
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697.2 KB
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Author(s)
Madsen, Mickey P.
Knott, Arnold
Andersen, Michael A. E.
Perreault, David J.
Date Issued
July 2015
Journal
Proceedings of the 2015 Workshop on Control and Modeling for Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Madsen, Mickey P., Arnold Knott, Michael A. E. Andersen, and David J. Perreault. "Outphasing Control of Gallium Nitride based Very High Frequency Resonant Converters." 2015 Workshop on Control and Modeling for Power Electronics (July 2015).
Version
Author's final manuscript
Abstract
In this paper an outphasing modulation control method suitable for line regulation of very high frequency resonant converters is described.
The pros and cons of several control methods suitable for very high frequency resonant converters are described and compared to outphasing modulation. Then the modulation technique is described and the design equations given.
Finally a design example is given for a converter consisting of two class E inverters with a lossless combiner and a common half bridge rectifier. It is shown how outphasing modulation can be used for line regulation while insuring equal and purely resistive loading of the inverters. Combined with a proper design of the inverters that, insures they can achieve zero voltage switching across a wide load range, and gallium nitride FETs for the switching devices, this makes it possible to achieve more than 90% efficiency across most of the input voltage range with good line regulation.
MIT Department
Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
http://ieee-compel.org/files/2015/07/TP_Final.pdf
