Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene
Name
Sanchez-2012-Quantum Hall Effect, Screening, and Layer-.pdf
Size
1.63 MB
Format
Adobe PDF
Checksum (MD5)
2d0a5963e0eb704dc34eb67e5537d36b
Author(s)
Sanchez-Yamagishi, Javier D.
Taychatanapat, Thiti
Watanabe, Kenji
Taniguchi, Takashi
Yacoby, Amir
Jarillo-Herrero, Pablo
Date Issued
February 2012
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Sanchez-Yamagishi, Javier et al. “Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene.” Physical Review Letters 108.7 (2012). © 2012 American Physical Society
Version
Final published version
Abstract
We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.108.076601
