Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
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Buonassisi_Ultrathin amorphous.pdf
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Author(s)
Heo, Jaeyeong
Siah, Sin Cheng
Kim, Sang Bok
Gordon, Roy G.
Mailoa, Jonathan P
Brandt, Riley E
Buonassisi, Anthony
Lee, Yun Seog
Date Issued
April 2013
Journal
Energy & Environmental Science
Publisher
Royal Society of Chemistry
Citation
Lee, Yun Seog, Jaeyeong Heo, Sin Cheng Siah, Jonathan P. Mailoa, Riley E. Brandt, Sang Bok Kim, Roy G. Gordon, and Tonio Buonassisi. “Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells.” Energy & Environmental Science 6, no. 7 (2013): 2112. © Royal Society of Chemistry
Version
Final published version
Abstract
We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
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Article is available under a Creative Commons license
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DOI of Published Version
https://doi.org/10.1039/c3ee24461j
