Impact of Film Stress and Film Thickness Process Control on GaAs-TiAu Metal Adhesion
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11664_2020_8521_ReferencePDF.pdf
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Author(s)
Connors, Michael K.
Coletta, Jennifer P.
Sheehan, Michael J.
Date Issued
October 2020
Journal
Journal of Electronic Materials
Publisher
Springer Science and Business Media LLC
Citation
Connors, Michael K. et al. "Impact of Film Stress and Film Thickness Process Control on GaAs-TiAu Metal Adhesion." Journal of Electronic Materials 49, 12 (October 2020): 7219–7227 © 2020 Minerals, Metals & Materials Society
Version
Author's final manuscript
Abstract
The fabrication of GaAs-based optoelectronic ridge-waveguide devices requires deposition of a topside-contact metallization for proper device operation. Fabrication delays occurring during the processing of TiAu-contact pads have been linked to poor adhesion and metal blister formation, factors that negatively affect the final device yield. In this study, we examined sputter-deposited Ti and Au films to determine the impact of film-thickness process control and film stress as measured by wafer bow. We theorized that competing stress relaxation forces between the Ti and Au films would produce a post-deposition change in wafer bow, which affects the Au film, setting the stage for blister creation. We now report the development of a reduced-stress sputter-deposited TiAu-contact metallization and demonstrate the utility of the modified process with fabrication of blister-free ridge-waveguide devices with high device yield.
MIT Department
Lincoln Laboratory
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1007/s11664-020-08521-z
