Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
Name
276937615-MIT.pdf
Description
Full printable version
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35.32 MB
Format
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Checksum (MD5)
98b27067dcdc73e80010289a70b79da6
Author(s)
Chung, Jinwook W. (Jinwook Will)
Advisor(s)
Tomás Palacios.
Date Issued
2008
Publisher
Massachusetts Institute of Technology
Abstract
In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency performance could be improved, the superior breakdown characteristics of nitride semiconductors would make these devices the best option for power amplifiers at any frequency. To achieve this goal, we have first identified some critical parameters that limit the high frequency performance of AlGaN/GaN HEMTs and then we have demonstrated several new technologies to increase the performance. Some of these technologies include advanced drain delay engineering, charge control in the channel and new N-face GaN HEMTs. Although more work is needed in the future to combine all these new technologies, the initial results are extremely promising.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (leaves 77-80).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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