Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume
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Author(s)
Hoagland, R. G.
Uberuaga, B. P.
Misra, Amit
Demkowicz, Michael J.
Date Issued
September 2011
Journal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Demkowicz, M. et al. “Influence of Interface Sink Strength on the Reduction of Radiation-induced Defect Concentrations and Fluxes in Materials with Large Interface Area Per Unit Volume.” Physical Review B 84.10 (2011): n. pag. Web. 17 Feb. 2012. © 2011 American Physical Society
Version
Final published version
Abstract
We use a reaction–diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface sink strength η. Materials containing a large volume fraction of interfaces may therefore be resistant to multiple forms of radiation-induced degradation, such as swelling and hardening, as well as to embrittlement by solute segregation, provided that the interfaces have suitable η values.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.84.104102
