Red emitting photonic devices using InGaP/InGaAlP material system
Name
62628423-MIT.pdf
Description
Full printable version
Size
2.56 MB
Format
Adobe PDF
Checksum (MD5)
676ec63eb73e018cfcb16ba4fde8f409
Author(s)
Kangude, Yamini
Advisor(s)
Leslie A. Kolodziejski.
Date Issued
2005
Publisher
Massachusetts Institute of Technology
Abstract
In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs substrate. The devices consist of a quantum well active region and a distributed bragg reflector at the bottom to reduce loss of emitted light into the substrate. The first device emits at a wavelength of 650 nm and is intended to create a photonic crystal light emitting diode (PCLED). PCLEDs have been demonstrated to have higher efficiency compared to devices without the photonic crystal. The second device emits at 690 nm and is intended for integrating with an organic semiconductor to form a hybrid organic-inorganic emitter. The devices were grown using gas source molecular beam epitaxy (GSMBE) and then processed to form the final device. .
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering; and, (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.
Includes bibliographical references (leaves 57-58).
Subjects
Materials Science and Engineering.
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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