Ambient-pressure CVD of graphene on low-index Ni surfaces using methane: A combined experimental and first-principles study
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PhysRevMaterials.2.073404.pdf
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Author(s) • • • • • • • •
Olmos-Asar, Jimena A.
Negreiros, Fabio R.
Kim, Ki Kang
Kong, Jing
Mankey, Gary J.
Araujo, Paulo T.
Mafra, Daniela Lopes
Dresselhaus, Mildred
Reina Cecco, Alfonso
Date Issued
July 2018
Journal
Physical Review Materials
Publisher
American Physical Society
Citation
Mafra, Daniela L. et al. "Ambient-pressure CVD of graphene on low-index Ni surfaces using methane: A combined experimental and first-principles study." Physical Review Materials 2, 7 (July 2018): 073404 © 2018 American Physical Society
Version
Final published version
Abstract
The growth of large area single-layer graphene (1-LG) is studied using ambient pressure chemical vapor deposition on single-crystal Ni(111), Ni(110), and Ni(100). By varying both the furnace temperature in the range of 800–1100 °C and the gas flow through the growth chamber, uniform, high-quality 1-LG is obtained for Ni(111) and Ni(110) single crystals and for Ni(100) thin films. Surprisingly, only multilayer graphene growth could be obtained for single-crystal Ni(100). The experimental results are analyzed to determine the optimum combination of temperature and gas flow. Characterization with optical microscopy, Raman spectroscopy, and optical transmission support our findings. Density-functional theory calculations are performed to determine the energy barriers for diffusion, segregation, and adsorption, and model the kinetic pathways for formation of different carbon structures on the low-index surfaces of Ni.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevMaterials.2.073404