Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices
Name
1907.05843.pdf
Description
Submitted version
Size
524.77 KB
Format
Adobe PDF
Checksum (MD5)
b0c6e9cf73d614e4a548878251037474
Author(s)
Ross, Caroline A.
Date Issued
January 2020
Journal
Nanotechnology
Publisher
IOP Publishing
Citation
Azam, Md. Ali et al. “Voltage control of domain walls in magnetic nanowires for energy-efficient neuromorphic devices.” Nanotechnology, 31, 14 (January 2020) © 2020 The Author(s)
Version
Original manuscript
Abstract
An energy-efficient voltage-controlled domain wall (DW) device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the DW motion utilizing spin transfer or spin-orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the DW are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy-efficient voltage-controlled nanomagnetic deep neural networks that can learn in real time.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1088/1361-6528/AB6234
