Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs
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Chung-2009-Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs.pdf
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Author(s)
Palacios, Tomas
Piner, E. L.
Lee, J.
Chung, J. W.
Date Issued
December 2009
Journal
Device Research Conference, 2009. DRC 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W. et al. “Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs.” Device Research Conference, 2009. DRC 2009. 2009. 155-156. ©2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/DRC.2009.5354963
