Intrinsic donor-bound excitons in ultraclean monolayer semiconductors
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Published version
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Author(s) • • • • • • • • •
Rivera, Pasqual
He, Minhao
Kim, Bumho
Liu, Song
Rubio-Verdú, Carmen
Moon, Hyowon
Mennel, Lukas
Rhodes, Daniel A
Yu, Hongyi
Taniguchi, Takashi
Date Issued
2021
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Citation
Rivera, Pasqual, He, Minhao, Kim, Bumho, Liu, Song, Rubio-Verdú, Carmen et al. 2021. "Intrinsic donor-bound excitons in ultraclean monolayer semiconductors." Nature Communications, 12 (1).
Version
Final published version
Abstract
© 2021, The Author(s). The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (>6 µs) and polarization lifetimes (>100 ns). Resonant excitation of the free inter- and intravalley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellitesʼ photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1038/S41467-021-21158-8