Heralding efficiency and correlated-mode coupling of near-IR fiber-coupled photon pairs
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PhysRevA.90.043804.pdf
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Author(s) • • • • • • • •
Dixon, P. Ben
Rosenberg, Danna
Stelmakh, Veronika
Grein, Matthew E.
Bennink, Ryan S.
Dauler, Eric A.
Kerman, Andrew J.
Molnar, Richard J.
Wong, Franco N. C.
Date Issued
October 2014
Journal
Physical Review A
Publisher
American Physical Society
Citation
Dixon, P. Ben, et al. "Heralding efficiency and correlated-mode coupling of near-IR fiber-coupled photon pairs." Phys. Rev. A 90, 043804 (October 2014). © 2014 American Physical Society
Version
Final published version
Abstract
We report on a systematic experimental study of the heralding efficiency and generation rate of telecom-band infrared photon pairs generated by spontaneous parametric down-conversion and coupled to single-mode optical fibers. We define the correlated-mode coupling efficiency, an inherent source efficiency, and explain its relation to heralding efficiency. For our experiment, we developed a reconfigurable computer-controlled pump-beam and collection-mode optical apparatus which we used to measure the generation rate and correlated-mode coupling efficiency. The use of low-noise, high-efficiency superconducting nanowire single-photon detectors in this setup allowed us to explore focus configurations with low overall photon flux. The measured data agree well with theory, and we demonstrated a correlated-mode coupling efficiency of 97% ± 2%, which is the highest efficiency yet achieved for this type of system. These results confirm theoretical treatments and demonstrate that very high overall heralding efficiencies can, in principle, be achieved in quantum optical systems. It is expected that these results and techniques will be widely incorporated into future systems that require, or benefit from, a high heralding efficiency.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1103/PhysRevA.90.043804