Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
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del alamo_Spatial distribution.pdf
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Author(s)
Li, Libing
Joh, Jungwoo
Thompson, Carl V.
del Alamo, Jesus A.
Date Issued
April 2012
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Li, Libing, Jungwoo Joh, J. A. del Alamo, and Carl V. Thompson. “Spatial Distribution of Structural Degradation Under High-Power Stress in AlGaN/GaN High Electron Mobility Transistors.” Appl. Phys. Lett. 100, no. 17 (2012): 172109. © 2012 American Institute of Physics
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Final published version
Abstract
The two-dimensional spatial distribution of structural degradation of AlGaN/GaN high electron mobility transistors was investigated under high-power electrical stressing using atomic force and scanning electron microscopy. It was found that pits form on the surface of the GaN cap layer at the edges of the gate fingers in the middle of the device. The average pit area and density increase gradually from the edge to the center of the fingers and are more common along inner fingers than fingers. It was also found that pit formation and growth are thermally activated.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4707163
