Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs
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Author(s)
Wang, Jianfei
Zens, Timothy
Hu, Juejun
Becla, Piotr
Kimerling, Lionel C.
Agarwal, Anuradha Murthy
Date Issued
May 2011
Journal
Proceedings of SPIE--the International Society for Optical Engineering; v. 8034
Publisher
SPIE
Citation
Wang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs.” Proc. SPIE 8034, Photonic Microdevices/Microstructures for Sensing III, 80340K (May 16, 2011). © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE)
Version
Final published version
Abstract
In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9]cmHz[superscript 1/2]W[superscript 1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1117/12.884081
