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Pure spin photocurrent in non-centrosymmetric crystals: bulk spin photovoltaic effect
Name
s41467-021-24541-7.pdf
Description
Published version
Size
1.57 MB
Format
Adobe PDF
Checksum (MD5)
97292d2a59f498c83ecf732643a45689
Author(s)
Xu, Haowei
Wang, Hua
Zhou, Jian
Li, Ju
Date Issued
December 2021
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Version
Final published version
Abstract
AbstractSpin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time $$\tau$$
τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe.
τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe.
Terms of Use
Creative Commons Attribution 4.0 International license
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DOI of Published Version
10.1038/s41467-021-24541-7
