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  4. Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

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Author(s)
Nam, Sung-Wook
•
Rooks, Michael J.
•
Yang, Joel K. W.
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Berggren, Karl K.
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Kim, Hyun-Mi
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Lee, Min-Hyun
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Kim, Ki-Bum
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Sim, Jae Hwan
•
Yoon, Do Yeung
Date Issued
December 2009
Journal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Nam, Sung-Wook et al. “Contrast Enhancement Behavior of Hydrogen Silsesquioxane in a Salty Developer.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2635. © 2009 American Vacuum Society
Version
Final published version
Abstract
The authors investigated a contrast enhancement behavior of hydrogen silsesquioxane (HSQ) in a salty development system (NaOH/NaCl). Time-resolved analysis of contrast curves and line-grating patterns were carried out to investigate the unique properties of a salty development process. In NaOH developer without salt, the development process was saturated beyond a certain development time. On the other hand, the addition of salt enabled a continuous development, which was not observed in the pure NaOH development. The continuous thinning process enhances the contrast of HSQ in the salty developer, which allows a fast collapsing behavior in HSQ line-grating patterns. During development process, salt seems to have the role of modifying HSQ by breaking network bonds preferentially, leading to a continuous development rate.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/74146
DOI of Published Version
https://doi.org/10.1116/1.3245991
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