Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices
Author(s) • • •
Yin, Han
Kumar, Abinash
LeBeau, James M.
Jaramillo, R.
Date Issued
January 8, 2021
Journal
Physical Review Applied
Publisher
American Physical Society (APS)
Citation
Yin, Han, Kumar, Abinash, LeBeau, James M. and Jaramillo, R. 2021. "Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices." Physical Review Applied, 15 (1).
Version
Final published version
Subjects
General Physics and Astronomy
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/physrevapplied.15.014014