A Germanium-on-Silicon Laser for on-Chip Applications
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Kimerling_A germanium-on-silicon.pdf
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Author(s)
Michel, Jurgen
Liu, Jifeng
Kimerling, Lionel C.
Camacho-Aguilera, Rodolfo Ernesto
Bessette, Jonathan T.
Cai, Yan
Date Issued
May 2011
Journal
Proceedings of the 2011 Conference on Lasers and Electro-Optics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Michel, Jurgen et al. "A germanium-on-silicon laser for on-chip applications." 2011 Conference on Lasers and Electro-Optics (2011). © 2011 Optical Society of America
Version
Final published version
Abstract
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5950134
