Inorganic semiconductors for printed transistors
Name
43932131-MIT.pdf
Description
Full printable version
Size
4.12 MB
Format
Adobe PDF
Checksum (MD5)
e7bccfd830a432095ebe399ab52010dc
Author(s)
Ridley, Brent, 1974-
Advisor(s)
Joseph Jacobson.
Date Issued
1999
Publisher
Massachusetts Institute of Technology
Abstract
CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source voltage of -5 V. For the same voltage sweep a mobility of 0.26 cm 2V- s- and an ON/OFF ratio of 1.3 x 103 was observed in a single device. Processing temperatures as low as 250 °C were found to produce semiconducting films that displayed a field effect. A new metathetic synthesis was developed to produce pyridine-capped CdSe nanoparticles at sizes below 20 A.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Program in Media Arts & Sciences, 1999.
Includes bibliographical references (leaves 49-51).
Subjects
Architecture. Program in Media Arts & Sciences.
MIT Department
Program in Media Arts and Sciences (Massachusetts Institute of Technology)
Terms of Use
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