GaN Memory Operational at 300 °C
Name
GaN_Memory_Operational_at_300C.pdf
Size
5.25 MB
Format
Adobe PDF
Checksum (MD5)
c1b83e63d6d25539fcad8f3a4bf395d9
Author(s)
Yuan, Mengyang
Xie, Qingyun
Niroula, John
Chowdhury, Nadim
Palacios, Tomas
Date Issued
November 1, 2022
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yuan, Mengyang, Xie, Qingyun, Niroula, John, Chowdhury, Nadim and Palacios, Tomas. 2022. "GaN Memory Operational at 300 °C." IEEE Electron Device Letters, 43 (12).
Version
Author's final manuscript
Subjects
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/led.2022.3218671
