Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
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Author(s)
Casias, Lilian
Morath, Christian
Steenbergen, Elizabeth
Umana-Membreno, Gilberto
Webster, Preston
Logan, Julie
Kim, Jin
Balakrishnan, Ganesh
Faraone, Lorenzo
Krishna, Sanjay
Date Issued
May 8, 2020
Journal
Applied Physics Letters
Citation
Lilian K. Casias, Christian P. Morath, Elizabeth H. Steenbergen, Gilberto A. Umana-Membreno, Preston T. Webster, Julie V. Logan, Jin K. Kim, Ganesh Balakrishnan, Lorenzo Faraone, Sanjay Krishna; Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material. Appl. Phys. Lett. 4 May 2020; 116 (18): 182109.
Version
Final published version
Abstract
Anisotropic carrier transport properties of unintentionally doped InAs/InAs 0.65 Sb 0.35 type-II strain-balanced superlattice material are evaluated using temperature-and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 Â10 3 cm 2 /V s and 1.60 cm 2 /V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.5144079
