RM³ Processing for In-plane Optical Interconnects on Si-CMOS and the Impact of Topographic Features on Losses in Deposited Dielectric Waveguides
Name
AMMNS027.pdf
Size
346.19 KB
Format
Adobe PDF
Checksum (MD5)
c8c07ed9c2146b980e738384769ad3a7
Author(s)
Barkley, Edward
Fonstad, Clifton G. Jr.
Date Issued
January 2004
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the applicability of RM³ integration to in-plane geometries for on-chip optical clock and signal distribution and on the suitability of commercially processed IC wafers for use as substrates for rectangular dielectric waveguides.
Subjects
optoelectronic integration
heterogeneous integration
hybrid assembly
in-plane laser diodes
rectangular dielectric waveguides
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