A High-Frequency Resonant Inverter Topology With Low-Voltage Stress
Name
Rivas high-frequency.pdf
Size
2.37 MB
Format
Adobe PDF
Checksum (MD5)
bdeea6d9f856e6f75fbd4c3ccd527e4b
Author(s)
Rivas, Juan M.
Han, Yehui
Leitermann, Olivia
Sagneri, Anthony D.
Perreault, David J.
Date Issued
July 2008
Journal
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Rivas, Juan M., Yehui Han, Olivia Leitermann, Anthony D. Sagneri, and David J. Perreault. “A High-Frequency Resonant Inverter Topology With Low-Voltage Stress.” IEEE Trans. Power Electron. 23, no. 4 (n.d.): 1759–1771. © 2008 IEEE
Version
Final published version
Abstract
This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low semiconductor voltage stress, small passive energy storage requirements, fast dynamic response, and good design flexibility. The structure and operation of the proposed topology are described, and a design procedure is introduced. Experimental results demonstrating the new topology are also presented. A prototype inverter is described that switches at 30 MHz and provides over 500 W of radio frequency power at a drain efficiency above 92%. It is expected that the inverter will find use as a building block in high-performance dc-dc converters among other applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/TPEL.2008.924616
