Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays
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Stable_and_High_Performance_AlGaN_Self-Aligned-Gate_Field_Emitter_Arrays.pdf
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1.3 MB
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Checksum (MD5)
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Author(s)
Shih, Pao-Chuan
Rughoobur, Girish
Engel, Zachary
Ahmad, Habib
Doolittle, William Alan
Akinwande, Akintunde I.
Palacios, Tomas
Date Issued
2022
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Shih, Pao-Chuan, Rughoobur, Girish, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan et al. 2022. "Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays." IEEE Electron Device Letters.
Version
Author's final manuscript
Abstract
AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and digital-etching tip sharpening to demonstrate three-terminal AlGaN SAG field emitter arrays (FEAs). These devices show a turn-on voltage of 19.5 V and an anode current density (JA) of 100 mA/cm2 at an overdrive voltage of 20 V, which are comparable with best Si devices. The AlGaN SAGFEAs can operate in DC mode at a fixed gate-emitter voltage (VGE) with JA of 3-5 mA/cm2 for at least 5 hours without a significant degradation. The gate leakage does not increase after the long DC operation, suggesting high-performance and stable AlGaN vacuum transistors.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1109/led.2022.3184996
