Graphene-Based Ambipolar RF Mixers
Name
Wang-2010-Graphene-Based Ambip.pdf
Size
303.92 KB
Format
Adobe PDF
Checksum (MD5)
a323494091a081f7c8b3829a8c9898a7
Author(s)
Wang, Han
Hsu, Allen Long
Wu, Justin
Kong, Jing
Palacios, Tomas
Date Issued
August 2010
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wang, Han et al. “Graphene-Based Ambipolar RF Mixers.” IEEE Electron Device Letters 31.9 (2010): 906–908. Web. 30 Mar. 2012. © 2010 Institute of Electrical and Electronics Engineers
Version
Final published version
Abstract
The combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/led.2010.2052017
