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  4. Room-Temperature Phosphorescence and Low-Energy Induced Direct Triplet Excitation of Alq 3 Engineered Crystals
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Room-Temperature Phosphorescence and Low-Energy Induced Direct Triplet Excitation of Alq 3 Engineered Crystals

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sword-2022-02-11T15:44:16.original.xml (130 B)
Original SWORD entry document
Author(s)
Bi, Hai
•
Huo, Chanyuan
•
Song, Xiaoxian
•
Li, Zhiqiang
•
Tang, Haoning
•
Griesse-Nascimento, Sarah
•
Huang, Kai-Chih
•
Cheng, Ji-Xin
•
Nienhaus, Lea
•
Bawendi, Moungi G
more
Date Issued
2020
Journal
Journal of Physical Chemistry Letters
Publisher
American Chemical Society (ACS)
Citation
Bi, Hai, Huo, Chanyuan, Song, Xiaoxian, Li, Zhiqiang, Tang, Haoning et al. 2020. "Room-Temperature Phosphorescence and Low-Energy Induced Direct Triplet Excitation of Alq 3 Engineered Crystals." Journal of Physical Chemistry Letters, 11 (21).
Version
Author's final manuscript
Abstract
© 2020 American Chemical Society. All rights reserved. Crystal engineering is a practical approach for tailoring material properties. This approach has been widely studied for modulating optical and electrical properties of semiconductors. However, the properties of organic molecular crystals are difficult to control following a similar engineering route. In this Letter, we demonstrate that engineered crystals of Alq3 and Ir(ppy)3 complexes, which are commonly used in organic light-emitting technologies, possess intriguing functional properties. Specifically, these structures not only process efficient low-energy induced triplet excitation directly from the ground state of Alq3 but also can show strong emission at the Alq3 triplet energy level at room temperatures. We associate these phenomena with local deformations of the host matrix around the guest molecules, which in turn lead to a stronger host-guest triplet-Triplet coupling and spin-orbital mixing.
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Creative Commons Attribution-Noncommercial-Share Alike
http://creativecommons.org/licenses/by-nc-sa/4.0/
Persistent DSpace Link
https://hdl.handle.net/1721.1/140283
DOI of Published Version
10.1021/ACS.JPCLETT.0C02416
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