A Ge-on-Si laser for electronic-photonic integration
Name
Sun-2009-A Ge-on-Si laser for electronic-photonic integration.pdf
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Author(s)
Sun, Xiaochen
Liu, Jifeng
Kimerling, Lionel C.
Michel, Jurgen
Date Issued
August 2009
Journal
Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum Electronics and Laser Science Conference. CLEO/QELS 2009.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Sun, Xiaochen, et al. “A Ge-on-Si laser for electronic-photonic integration.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2. ©2009 IEEE.
Version
Final published version
Abstract
We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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