The development of a nonvolatile ferroelectric memory with nondestructive readout
Name
46988324-MIT.pdf
Description
Full printable version
Size
6.03 MB
Format
Adobe PDF
Checksum (MD5)
0815122a44a7a30bffcdbc6f91b5ee7e
Author(s)
Chadwick, Thomas B. (Thomas Burhoe)
Advisor(s)
Anthony Marques and James E. Chung.
Alternative Title
Nonvolatile ferroelectric memory with nondestructive readout
Date Issued
1994
Publisher
Massachusetts Institute of Technology
Abstract
For the past three years, a project group at the Charles Stark Draper Laboratory has been developing a nonvolatile memory that uses novel ferroelectric technology. The advancements made could prove to give ferroelectrics a new lease on life as a memory technology by overcoming some of the inherent limitations that have hampered their use in the past. The primary advancement of the project has been the development of a nondestructive readout (NDRO) technique which exploits the hysteresis exhibited by the small-signal capacitance of ferroelectrics. This has led to the development of an NDRO sense amplifier which has evolved from circuit board prototypes to a fully custom CMOS part. A multichip module (MCM) was employed to integrate the CMOS technology with a ferroelectric technology. This thesis develops several models for the behavior of ferroelectrics, examines how ferroelectric memory compares to the more mainstream silicon-based memory technologies, and chronicles the project from the inception of the NDRO sensing technique through the production of the various experimental parts.
Description
Thesis (S.B. and S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
Includes bibliographical references (p. 99).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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