Analytical model for RF power performance of deeply scaled CMOS devices
Name
del Alamo-Analytical model for RF power.pdf
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269.69 KB
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Author(s)
Gogineni, Usha
del Alamo, Jesus A.
Valdes-Garcia, Alberto
Date Issued
July 2011
Journal
2011 IEEE Radio Frequency Integrated Circuits Symposium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Gogineni, Usha, Jesus del Alamo, and Alberto Valdes-Garcia. “Analytical Model for RF Power Performance of Deeply Scaled CMOS Devices.” IEEE Radio Frequency Integrated Circuits Symposium, 2011. 2011 1–4.
Version
Author's final manuscript
Abstract
This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under both maximum output power and maximum PAE conditions. The model allows circuit designers to quickly estimate the power and efficiency of a device layout without need for complicated compact models or simulations.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1109/RFIC.2011.5940647
